Plural polygon source pattern for mosfet
US5130767A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1991 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Feb 8, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/0603
Abstract
A high power MOSFET has a plurality of closely packed polygonal sources spaced from one another on one surface of a semiconductor body. An elongated gate electrode is exposed in the spacing between the polygonal sources and cooperates with two channels, one for each adjacent source electrode, to control conduction from the source electrode through the channel and then to a drain electrode on the opposite surface of the semiconductor body. The conductive region adjacent the channel and between adjacent sources is relatively highly conductive in the section of the channel adjacent to the surface containing the sources. The polygonal shaped source members are preferably hexagonal so that the distance between adjacent sources is relatively constant throughout the device. Each polygonal region has a relatively deep central portion and a shallow outer shelf portion. The shelf generally underlies an annular source region. The deep central portion underlies an aluminum conductive electrode and is sufficiently deep that it will not be fully penetrated by aluminum spiking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.