Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
US5134090A · kind A · utility
13Cited by
14References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1989 |
| Grant date | Jul 28, 1992 |
| Priority date | — |
| Expiry date | Jun 12, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates the first layer. Silicon is then deposited at a temperature within the range between 400 degrees C. and 700 degrees C. and the polycrystalline material that forms is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.