Method of fabricating a semiconductor device including a protective layer
US5134093A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1991 |
| Grant date | Jul 28, 1992 |
| Priority date | — |
| Expiry date | Jan 17, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is disclosed, which can prevent disconnection failures due to corrosion of aluminum-base alloy lines in the semiconductor device. First, an aluminum-base alloy film containing at least one kind of alloying element other than aluminum is formed on an insulating film which covers a semiconductor substrate. Before the surface of the aluminum-base alloy film is cleaned with fuming nitric acid, the surface treatment of the aluminum-base alloy film is performed using a plasma of an oxygen-base gas, to cover fully the surface of the aluminum-base alloy film with passivation film. Next, the given portions of the aluminum-base alloy film are selectively etched to form a line pattern. The surface treatment of the line pattern is performed using a plasma of an oxygen-base gas to cover fully the sides of the line pattern with passive film, before the surface of the line pattern is cleaned with fuming nitric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.