Neutral impurities to increase lifetime of operation of semiconductor devices
US5134447A · kind A · utility
25Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1990 |
| Grant date | Jul 28, 1992 |
| Priority date | — |
| Expiry date | Aug 27, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to reduce the rate of (hot charge-carrier) degradation of semiconductor devices formed in a semiconductor body, a neutral impurity--such as germanium in silicon MOS transistors--is introduced into the body in a neighborhood of an intersection of a p-n junction with a surface of the body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.