Kwok Ng
19Patents
10h-index
26Co-inventors
72Inventor score
Filing activity: Feb 17, 1984 → Oct 30, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5767561A | Integrated circuit device with isolated circuit elements | Electricity | 65 | Expired |
| US4763183A | Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method | Electricity | 55 | Expired |
| US4896108A | Test circuit for measuring specific contact resistivity of self-aligned contacts in integrated circuits | Electricity | 41 | Expired |
| US4613891A | Packaging microminiature devices | Electricity | 40 | Expired |
| US6509242B2 | Heterojunction bipolar transistor | Electricity | 29 | Expired |
| US5134447A | Neutral impurities to increase lifetime of operation of semiconductor devices | Electricity | 25 | Expired |
| US7762121B2 | Method and apparatus for sensing hydrogen gas | Physics | 12 | Active |
| US6395611B1 | Inductor or low loss interconnect and a method of manufacturing an inductor or low loss interconnect in an integrated circuit | Electricity | 12 | Expired |
| US6849911B2 | Formation of metal nanowires for use as variable-range hydrogen sensors | Physics | 11 | Expired |
| US5744840A | Electrostatic protection devices for protecting semiconductor integrated circuitry | Electricity | 10 | Expired |
| US7237429B2 | Continuous-range hydrogen sensors | Physics | 9 | Expired |
| US7104111B2 | Formation of metal nanowires for use as variable-range hydrogen sensors | Physics | 7 | Expired |
| US7287412B2 | Method and apparatus for sensing hydrogen gas | Physics | 6 | Expired |
| US7180103B2 | III-V power field effect transistors | Electricity | 6 | Expired |
| US6121101A | Process for fabricating bipolar and BiCMOS devices | Electricity | 6 | Expired |
| US7367215B2 | Formation of metal nanowires for use as variable-range hydrogen sensors | Physics | 5 | Active |
| USH208H | Packaging microminiature devices | General | 4 | Active |
| US7537984B2 | III-V power field effect transistors | Electricity | 0 | Active |
| US7511333B2 | Nonvolatile memory cell with multiple floating gates and a connection region in the channel | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.