Multichip module having integral decoupling capacitor
US5134539A · kind A · utility
28Cited by
14References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1990 |
| Grant date | Jul 28, 1992 |
| Priority date | — |
| Expiry date | Dec 17, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integral decoupling capacitor for a multichip module. The capacitor is formed over a support base material which need not be conductive. A first plate is formed by deposition of an anodizable metal. The metal is then anodized to form a dielectric layer. A second layer of metal is then formed over the dielectric layer. The formation of the capacitor over the surface of the wafer allows modules to be inventoried. Direct contact to the metal forming the capacitor plates relieves the support base from any requirement to be conductive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.