Method of forming conductors within an insulating substrate
US5136124A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1990 |
| Grant date | Aug 4, 1992 |
| Priority date | — |
| Expiry date | Sep 19, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4644
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an electrically conductive line between two layers of insulating material and method for connecting the line through both layers of the insulating material to the opposite surfaces is provided. In the method, first, second and third layers of insulating material are provided wherein the first and third layers are separated by the second layer of insulating material which is different in etch rate from the first and third layers. The edge portion of all three layers is exposed and the insulating layer of the second material is selectively etched to remove the revealed edge portion and provide a slot between the first and third layers of insulating material. Also openings are provided in both the first and third layers of insulating material which communicate with the slot and extend respectively through the layers of the first and third insulating material. Thereafter, a conductive material such as tungsten is deposited in the slot and the openings and also on the face of the stacked insulating material. Finally, the excess tungsten is removed from the faces of the insulating material of the first and third layers leaving a conductive line sandwiched between the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.