Non-volatile semiconductor memory for volatiley and non-volatiley storing information and writing method thereof
US5136540A · kind A · utility
12Cited by
17References
21Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 12, 1990 |
| Grant date | Aug 4, 1992 |
| Priority date | — |
| Expiry date | Mar 12, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory has integrated memory cells each operative to carry out writing and reading of information on a random-access basis and each having an electric charge storage structure effective to memorize the information in a nonvolatile state. The information is temporarily written into each memory cell in a volatile state, and thereafter the temporarily written information is written at once into a respective electric charge storage structure of each memory cell, thereby effecting high speed writing of nonvolatile information into the respective memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.