Ryoji Takada
5Patents
5h-index
4Co-inventors
48Inventor score
Filing activity: Mar 12, 1990 → Jan 14, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6229188A | MOS field effect transistor and its manufacturing method | Electricity | 128 | Expired |
| US5923985A | MOS field effect transistor and its manufacturing method | Electricity | 73 | Expired |
| US5210716A | Semiconductor nonvolatile memory | Physics | 18 | Expired |
| US5136540A | Non-volatile semiconductor memory for volatiley and non-volatiley storing information and writing method thereof | Physics | 12 | Expired |
| US5825064A | Semiconductor volatile/nonvolatile memory | Physics | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.