Semiconductor laser
US5136601A · kind A · utility
5Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1989 |
| Grant date | Aug 4, 1992 |
| Priority date | — |
| Expiry date | Jul 13, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and portions close to facets, in order to reduce optical feedback induced noise and astigmatism, and to facilitate the manufacture thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.