Semiconductor electron emitting device
US5138402A · kind A · utility
9Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1991 |
| Grant date | Aug 11, 1992 |
| Priority date | — |
| Expiry date | Dec 13, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/308
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor electron emitting device comprising a Schottky electrode and a p type semiconductor. The Schottky electrode is disposed on the p type semiconductor and defines a junction formed therebetween. The p type semiconductor has an impurity concentration within a predetermined range adapted for causing an avalanche breakdown responsive to a reverse biasing voltage applied between said p type semiconductor and said Schottky electrode. Electrons are emitted from the Schottky electrode in response to the application of the reverse bias voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.