Film-forming on substrate by sputtering
US5139633A · kind A · utility
20Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1991 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Jul 12, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a process for the deposition of a film of an inorganic substance such as silicon carbide on the surface of a substrate such as a silicon wafer by the method of sputtering, as in the process for the preparation of a membrane to serve as an X-ray lithographic mask, using a target disc and a substrate disc held in parallel to each other, uniformity in the internal stress of the deposited film can be improved by displacing the target or the substrate relative to each other during the sputtering procedure in the direction parallel to the surface of the target or substrate in a distance of at least 1 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.