Process for chemical vapor deposition of transition metal nitrides
US5139825A · kind A · utility
125Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1989 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Nov 30, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing a thin film of a transition metal nitride, e.g., titanium nitride, on a substrate is provided. The vapors of a transition metal organometallic coompound or a transition metal amido compound are mixed with ammonia gas and allowed to react near a substrate heated to a temperature in the range of 100.degree. C. to 400.degree. C., resulting in deposition of a film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.