David H. Hoffman
16Patents
8h-index
7Co-inventors
65Inventor score
Filing activity: Dec 29, 1988 → Jul 20, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5139825A | Process for chemical vapor deposition of transition metal nitrides | Chemistry; Metallurgy | 125 | Expired |
| US5178911A | Process for chemical vapor deposition of main group metal nitrides | Chemistry; Metallurgy | 100 | Expired |
| US4855247A | Process for fabricating self-aligned silicide lightly doped drain MOS devices | Emerging Cross-Sectional Technologies | 73 | Expired |
| US7565259B2 | System and method for reducing temperature variation during burn in | Physics | 64 | Active |
| USD550852S1 | Thermal pack | General | 56 | Expired |
| US4908326A | Process for fabricating self-aligned silicide lightly doped drain MOS devices | Emerging Cross-Sectional Technologies | 44 | Expired |
| US6900650B1 | System and method for controlling temperature during burn-in | Physics | 35 | Expired |
| USD556333S1 | Therapeutic thermal pack | General | 31 | Expired |
| US6897671B1 | System and method for reducing heat dissipation during burn-in | Physics | 7 | Expired |
| US7248988B2 | System and method for reducing temperature variation during burn in | Physics | 6 | Expired |
| USD333679S | Document holder | General | 5 | Expired |
| US7242205B1 | System and method for reducing heat dissipation during burn-in | Physics | 5 | Expired |
| US7834648B1 | Controlling temperature in a semiconductor device | Physics | 3 | Active |
| US7595652B2 | System and method for reducing heat dissipation during burn-in | Physics | 1 | Active |
| US7463050B1 | System and method for controlling temperature during burn-in | Physics | 1 | Expired |
| US8843344B2 | System and method for reducing temperature variation during burn in | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.