Method of producing a t-shaped gate electrode
US5139968A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1990 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Oct 31, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a relatively broad recess in a semiconductor substrate between a source electrode and a drain electrode, a relatively narrow, deeper recess closer to the source electrode than to the drain electrode, and a T-shaped gate electrode having a broad head disposed in the narrower recess. A production method for a semiconductor device having a T-shaped gate electrode provided with a broad head and disposed in a two stage recess includes producing a relatively broad recess in a semiconductor substrate leaving a dummy gate, producing a resist pattern for producing the head of the T-shaped gate electrode, exposing the dummy gate by removing some of the resist pattern, and thereafter producing a narrower, deeper recess closer to the source electrode than to the drain electrode, thereby producing a two stage recess structure and producing a T-shaped gate electrode in the deeper recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.