Anneal to decrease moisture absorbance of intermetal dielectrics
US5139971A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1991 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Jun 7, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a device having an intermetal dielectric film which is formed and annealed to prevent a significant quantity of ambient moisture from being absorbed by the intermetal dielectric film prior to passivation layer deposition is disclosed. An intermetal dielectric layer is formed over a substrate having a interconnection layer. A second interconnect layer is formed over the IMD layer. The substrate with the intermetal dielectric is annealed anytime between IMD formation and passivation layer deposition to produce a film that does not absorb a significant quantity of ambient moisture, and therefore, longer queue times can be utilized between the anneal and subsequent processing. The present invention reduces the amount of water in the device which reduces hot electron induced device degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.