Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate
US5141569A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 1990 |
| Grant date | Aug 25, 1992 |
| Priority date | — |
| Expiry date | Apr 4, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/11
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
`Unintentionally` doped P type GaAs is grown on silicon by a metal organic chemical vapor deposition process in which the molecular ratio of arsenic to gallium in the growth ambient is reduced to a value that is sufficiently low to cause the creation of donor (As) site vacancies in the grown GaAs layer, which become occupied by acceptor (carbon) atoms in the metal organic compound, thereby resulting in the formation of a buffer GaAs layer having a P type majority carrier characteristic. Preferably, the silicon substrate has its growth surface inclined from the [100] plane toward the [011] direction is initially subjected to an MOCVD process (e.g. trimethyl gallium, arsine chemical vapor deposition) at a reduced temperature (e.g. 425.degree. C.) and at atmospheric pressure, to form a thin (400 Angstroms) nucleation layer. During this growth step the Group V/Group III mole ratio (of arsenic to gallium) is maintained at an intermediate value. The temperature is then ramped to 630.degree. C. and gas content adjusted to reduce the V/III mole ratio to a value less than 5.0, so as to grow a buffer layer of GaAs is grown on the nucleation layer. Because the molecular ratio of arsenic to ga…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.