Milton Feng
43Patents
11h-index
28Co-inventors
75Inventor score
Filing activity: May 4, 1981 → Oct 11, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6143997A | Low actuation voltage microelectromechanical device and method of manufacture | Emerging Cross-Sectional Technologies | 92 | Expired |
| US4396437A | Selective encapsulation, controlled atmosphere annealing for III-V semiconductor device fabrication | Electricity | 34 | Expired |
| US7286583B2 | Semiconductor laser devices and methods | Electricity | 32 | Expired |
| US7091082B2 | Semiconductor method and device | Electricity | 32 | Expired |
| US7535034B2 | PNP light emitting transistor and method | Electricity | 29 | Active |
| US7354780B2 | Semiconductor light emitting devices and methods | Electricity | 27 | Expired |
| US6727530B1 | Integrated photodetector and heterojunction bipolar transistors | Electricity | 24 | Expired |
| US5141893A | Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate | Electricity | 20 | Expired |
| US7711015B2 | Method for controlling operation of light emitting transistors and laser transistors | Electricity | 20 | Active |
| US7813396B2 | Transistor laser devices and methods | Electricity | 19 | Active |
| US7998807B2 | Method for increasing the speed of a light emitting biopolar transistor device | Electricity | 12 | Expired |
| US7693195B2 | Semiconductor light emitting devices and methods | Electricity | 11 | Active |
| US4407694A | Multi-range doping of epitaxial III-V layers from a single source | Emerging Cross-Sectional Technologies | 10 | Expired |
| US8179937B2 | High speed light emitting semiconductor methods and devices | Electricity | 9 | Active |
| US4473939A | Process for fabricating GaAs FET with ion implanted channel layer | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6717496B2 | Electromagnetic energy controlled low actuation voltage microelectromechanical switch | Electricity | 9 | Expired |
| US6919784B2 | High cycle MEMS device | Electricity | 8 | Expired |
| US6678943B1 | Method of manufacturing a microelectromechanical switch | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7888199B2 | PNP light emitting transistor and method | Electricity | 6 | Active |
| US7888625B2 | Method and apparatus for producing linearized optical signals with a light-emitting transistor | Electricity | 6 | Active |
| US8005124B2 | Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits | Electricity | 6 | Active |
| US6998946B2 | High cycle deflection beam MEMS devices | Electricity | 6 | Expired |
| US8509274B2 | Light emitting and lasing semiconductor methods and devices | Electricity | 5 | Active |
| US5141569A | Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate | Emerging Cross-Sectional Technologies | 5 | Expired |
| US8179939B2 | Light emitting and lasing semiconductor devices and methods | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.