Silicon photodiode for monolithic integrated circuits and method for making same
US5141878A · kind A · utility
17Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1990 |
| Grant date | Aug 25, 1992 |
| Priority date | — |
| Expiry date | Apr 2, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.