MIS-type semiconductor device of LDD structure and manufacturing method thereof
US5141891A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1991 |
| Grant date | Aug 25, 1992 |
| Priority date | — |
| Expiry date | Oct 17, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An MIS-type semiconductor device comprises PSD structure and LDD structure. The LDD structure comprises high concentration impurity regions formed by thermally diffusing impurities which have been contained in source/drain electrode conductive layers made of polysilicon onto a semiconductor substrate, and low concentration impurity regions formed through ion implantation using resist patterned on channel regions and the source/drain electrode conductive layers as mask. A gate electrode is formed, after formation of the low concentration impurity regions, to cover them and have its edges overlap the source/drain electrode conductive layers. The LDD structure suppresses the short channel effects which might be caused in the MIS-type semiconductor device and thus enables channels length to be miniaturized while the PSD structure enables also miniaturization of source/drain structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.