Conducting electrode layers for ferroelectric capacitors in integrated circuits and method
US5142437A · kind A · utility
66Cited by
19References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1991 |
| Grant date | Aug 25, 1992 |
| Priority date | — |
| Expiry date | Jun 13, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A ferroelectric capacitor for an integrated circuit includes a stack formed by a layer of a noble metal, a layer of a conducting oxide, a layer of a ferroelectric material, another layer of a conducting oxide and another layer of a noble metal. The capacitor can also have another layer of conducting oxide located over the top layer of noble metal and below the first layer of the noble metal. A method of forming the same through establishing one layer over the other and annealing each layer is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.