Horizontal microelectronic field emission devices
US5144191A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1991 |
| Grant date | Sep 1, 1992 |
| Priority date | — |
| Expiry date | Jun 12, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J3/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microelectronic field emitter includes a horizontal emitter electrode and a vertical extraction electrode on the horizontal face of a substrate. An end of the horizontal emitter electrode and the end of the vertical extraction electrode form an electron emission gap therebetween. The emitter electrode may be formed on an insulating layer which is formed on a substrate. The insulating layer also includes a sidewall, and the extraction electrode may be formed on the sidewall with one thereof extending adjacent the emitter electrode to form an electron emission gap therebetween. A vertical collector electrode may also be formed on the sidewall of a second insulating layer spaced from the first sidewall. The field emitter may be cylindrical, planar, or of various other shapes. multiple emitters, extractors and collectors may be stacked on one another. The emitters may be formed using conventional microelectronic fabrication techniques, in which an insulating layer is etched to form a sidewall and conformal metallization is used to form extractor and collector electrodes. A low capacitance, high speed, high power horizontal microelectronic emitter may thereby be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.