Particle source, especially for reactive ionic etching and plasma-supported CVD processes

US5144196A · kind A · utility

Assignee

• Leybold GmBH · DE

Inventors

• Rainer Gegenwart · Rödermark, DE
• Jochen Ritter · Laubach, DE

Key dates

• Filing date: Sep 30, 1991
• Grant date: Sep 1, 1992
• Expiry date: Sep 30, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/32678
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Particle source, especially for reactive ion etching and plasma-enhanced CVD processes in pass-through apparatus for the treatment of large-area substrates (4) having a container completely enveloping a first plasma (19), a magnetic field generator (8, 9, 10) which fulfills the electron-cyclotron resonance, a waveguide (15) connected to the container for the delivery of electromagnetic waves, preferably microwaves (17), for the production of the plasma (19), a coupling window (16) as well as a gas feeding system for supplying the plasma process with reactive, and, for example, inert gas, the first plasma (19) being enveloped by a plasma chamber (7), the interior spaces of the plasma chamber (7) and of the adjacent vacuum chamber (2) are connected to one another, an additional guard window (12) is situated in the plasma chamber (7) directly in front of the coupling window and has an approximately constant gap (13) between it and the chamber walls (7c, 7d), a separate feeding is performed of for example inert gas (11) into the space between coupling window (16) and guard window (12) and of reactive gas (6) between guard window (12) and substrate (4), and an intermediate plasma is ign…