Bandgap voltage generator
US5144223A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 12, 1991 |
| Grant date | Sep 1, 1992 |
| Priority date | — |
| Expiry date | Mar 12, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S323/907
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A bandgap voltage generator useful in CMOS integrated circuits using intrinsic bipolar transistors. The generator is comprised of a pair of bipolar voltage generator which utilizes bipolar devices in a common collector configuration. Therefore for the first time a bandgap voltage reference using the intrinsic vertical bipolar transistor can be implemented in a CMOS chip without the need for an operational amplifier. In order to provide the above, an embodiment of the present invention is a bandgap voltage generator comprising a pair of bipolar transistors connected in common collector configuration with ratioed resistors on the emitters to define branch current and provide temperature compensation, and field effect transistors connected as source followers in series with the emitters of the bipolar transistors for establishing bandgap potential across the resisters and base-emitter junctions, a current comparator connected in series with the drains of the first pair of field effect transistors for controlling the emitter-collector currents in the bipolar transistors, the current comparator and the common collector being connected across a power source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.