Power semiconductor device with switch-off facility
US5144400A · kind A · utility
8Cited by
5References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 1, 1991 |
| Grant date | Sep 1, 1992 |
| Priority date | — |
| Expiry date | Feb 1, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/133
Abstract
In an MOS-controlled power semiconductor device with switch-off facility having a thyristor-like structure, the switch-off capability is improved by inserting emitter ballast resistors between the first main electrode (H1) and the associated emitter region (8). For this purpose, the emitter region (8) is of annular or strip-like construction and encloses a more weakly doped central region (9) which is exclusively contacted by the first main-electrode metallization (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.