Method of manufacturing a planar microelectronic device
US5145438A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 15, 1991 |
| Grant date | Sep 8, 1992 |
| Priority date | — |
| Expiry date | Jul 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J21/105
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microelectronic device and a method of forming the same are disclosed. The microelectronic device includes a cathode, an anode and a first grid disposed adjacent a major surface of a substrate. The first grid is positioned between the cathode and the anode. The first grid is formed from conductive material using a sidewall spacer technique. The anode is made of conductive polysilicon, the cathode is made of tungsten and has a portion elevated from the substrate to aid in the ballistic transport of electrons. A second grid is formed using a sidewall spacer technique, and is positioned between the first grid and the anode. The method of making a microelectronic device includes forming an anode and a cathode on a surface of a substrate, then depositing, in series, first and second sacrificial layers. A first wall is formed by removing portion of the second sacrificial layer. The first wal is positioned between the anode and the cathode. A first conductive layer is deposited against the first wall and over the exposed second sacrificial layer and over exposed portions of the first sacrificial layer. A conductive sidewall spacer is formed against the first wall and between the anode a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.