Igor Bol
22Patents
9h-index
8Co-inventors
68Inventor score
Filing activity: Dec 24, 1990 → Oct 25, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5322594A | Manufacture of a one piece full width ink jet printing bar | Performing Operations; Transporting | 149 | Expired |
| US7462908B2 | Dynamic deep depletion field effect transistor | Electricity | 111 | Active |
| US6541820B1 | Low voltage planar power MOSFET with serpentine gate pattern | Electricity | 77 | Expired |
| US5112436A | Method of forming planar vacuum microelectronic devices with self aligned anode | Electricity | 40 | Expired |
| US6656843B2 | Single mask trench fred with enlarged Schottky area | Electricity | 14 | Expired |
| US7944035B2 | Double sided semiconduction device with edge contact and package therefor | Electricity | 10 | Active |
| US5417801A | Process to manufacture bushings for micromechanical elements | Performing Operations; Transporting | 10 | Expired |
| US5269877A | Field emission structure and method of forming same | Electricity | 10 | Expired |
| US6294445A | Single mask process for manufacture of fast recovery diode | Electricity | 9 | Expired |
| US6858499B2 | Method for fabrication of MOSFET with buried gate | Electricity | 9 | Expired |
| US5145438A | Method of manufacturing a planar microelectronic device | Electricity | 8 | Expired |
| US6699775B2 | Manufacturing process for fast recovery diode | Electricity | 8 | Expired |
| US6570218B1 | MOSFET with a buried gate | Electricity | 7 | Expired |
| US5149397A | Fabrication methods for micromechanical elements | Physics | 6 | Expired |
| US5151153A | Manufacture of a suspended micromechanical element | Electricity | 6 | Expired |
| US5209818A | Manufacture of a micromechanical element with two degrees of freedom | Physics | 4 | Expired |
| US8299527B2 | Vertical LDMOS device and method for fabricating same | Electricity | 2 | Active |
| US5248379A | Method to manufacture lenses, optical systems and focusing mirrors by micromachining | Emerging Cross-Sectional Technologies | 1 | Expired |
| US8735294B2 | Method for fabricating a vertical LDMOS device | Electricity | 0 | Active |
| US9653597B2 | Method for fabricating a shallow and narrow trench FET and related structures | Electricity | 0 | Active |
| US7319059B2 | High density FET with self-aligned source atop the trench | Electricity | 0 | Expired |
| US8420505B2 | Process for manufacture of thin wafer | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.