MOCVD of indium oxide and indium/tin oxide films on substrates
US5147688A · kind A · utility
11Cited by
12References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 11, 1991 |
| Grant date | Sep 15, 1992 |
| Priority date | — |
| Expiry date | Jan 11, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/407
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.