Method of manufacturing a metallic silicide transparent electrode
US5151385A · kind A · utility
53Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1988 |
| Grant date | Sep 29, 1992 |
| Priority date | — |
| Expiry date | Oct 3, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.