Semiconductor device
US5153692A · kind A · utility
3Cited by
0References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 28, 1991 |
| Grant date | Oct 6, 1992 |
| Priority date | — |
| Expiry date | Mar 28, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
In a semiconductor device, a depletion region is provided in a part of an emitter region by pinning Fermi level at Schottky junction or an interface with a high-resistivity semiconductor layer or surface thereof. The depletion region is extended throughout a full thickness of the emitter layer, thereby to prevent electrons from being diffused in the direction of the interface with the high-resistivity semiconductor layer so as to recombine through crystalline defects. Thus, the current gain of the device is greatly increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.