On-chip temperature sensor utilizing a Schottky barrier diode structure
US5154514A · kind A · utility
24Cited by
17References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1991 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Aug 29, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A temperature sensor, comprising: a diode structure including, a) a silicon substrate, b) a first region of a metal silicide in the silicon substrate, c) a second region of a metal-oxide semiconductor material on the first region, d) a third region of a metal over the second region; and, means for using the diode structure as a temperature sensitive device to measure an ambient temperature. The metal-oxide semiconductor material is preferably selected to have a bandgap of not less than about 3.0 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.