Charge domain differential conductance synapse cell for neural networks
US5155377A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 16, 1992 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Jan 16, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor charge transfer synapse cell has a capacitor coupled between an input line and an intermediate node. A voltage pulse applied to the input line causes charge transfer from one summing line to another through a pair of series connected field-effect devices. Each of the devices has an associated gate potential which controls its resistance. In response to the low-to-high voltage transition of the input pulse current flows through the devices from the intermediate node to the summing lines. A high-to-low transition causes current to flow in the opposite direction. Because the relative conductances of the devices are different depending on the direction of current flow, a net charge is transferred from one summing line to the other. The amount of charge transferred is a function of the amplitude of the pulsed input, the gate potentials, and the capacitance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.