Inventor · Shingle Springs, CA, US

Hernan A. Castro

133Patents
17h-index
40Co-inventors
86Inventor score

Filing activity: Dec 9, 1988 → May 20, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US5028810A Four quadrant synapse cell employing single column summing line Physics 98 Expired
US4961002A Synapse cell employing dual gate transistor structure Physics 73 Expired
US4950917A Semiconductor cell for neural network employing a four-quadrant multiplier Physics 64 Expired
US4904881A EXCLUSIVE-OR cell for neural network and the like Physics 42 Expired
US5050123A Radiation shield for EPROM cells Physics 39 Expired
US8891280B2 Interconnection for memory electrodes Electricity 37 Active
US4956564A Adaptive synapse cell providing both excitatory and inhibitory connections in an associative network Physics 37 Expired
US9312005B2 Accessing memory cells in parallel in a cross-point array Physics 31 Active
US5031142A Reset circuit for redundant memory using CAM cells Physics 29 Expired
US9025398B2 Metallization scheme for integrated circuit Electricity 29 Active
US9190144B2 Memory device architecture Electricity 23 Active
US9378774B2 Interconnection for memory electrodes Electricity 21 Active
US8767482B2 Apparatuses, devices and methods for sensing a snapback event in a circuit Physics 21 Active
US10847220B2 Apparatuses and methods for bi-directional access of crosspoint arrays Physics 21 Active
US7106626B2 Serially sensing the output of multilevel cell arrays Physics 18 Expired
US5088066A Redundancy decoding circuit using n-channel transistors Physics 18 Expired
US9355718B2 Metallization scheme for integrated circuit Electricity 18 Active
US10366747B2 Comparing input data to stored data Physics 17 Active
US9224635B2 Connections for memory electrode lines Electricity 16 Active
US5155377A Charge domain differential conductance synapse cell for neural networks Physics 16 Expired
US8374022B2 Programming phase change memories using ovonic threshold switches Physics 16 Active
US9786345B1 Compensation for threshold voltage variation of memory cell components Physics 15 Active
US9324423B2 Apparatuses and methods for bi-directional access of cross-point arrays Physics 15 Active
US10395738B2 Operations on memory cells Physics 14 Active
US8917534B2 Path isolation in a memory device Physics 14 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.