Semiconductor device having low source inductance
US5155563A · kind A · utility
50Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1991 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Mar 18, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a low source inductance are fabricated by having a maximum of two sources each in contact with a region which makes contact to a substrate or back side of the device. The back side source contact also allows the device to be mounted directly to a grounded heatsink.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.