Ferroelectric capacitor and a semiconductor device having the same
US5155573A · kind A · utility
65Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1990 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Dec 24, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A ferroelectric capacitor includes a ferroelectric layer consisting of lead zirconate titanate formed on a silicon substrate, a plurality of rectangular trenches formed in the direction of thickness of the ferroelectric layer with a ferroelectric material therebetween, and first and second electrodes consisting of metal tungsten buried in the trenches to oppose each other with the ferroelectric material therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.