Kazuhide Abe
84Patents
20h-index
76Co-inventors
91Inventor score
Filing activity: Aug 31, 1988 → Apr 8, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6198652A | Non-volatile semiconductor integrated memory device | Physics | 153 | Expired |
| US5739563A | Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same | Electricity | 121 | Expired |
| US5952687A | Semiconductor memory device having a trench capacitor with lower electrode inside the trench | Emerging Cross-Sectional Technologies | 83 | Expired |
| US5297077A | Memory having ferroelectric capacitors polarized in nonvolatile mode | Physics | 80 | Expired |
| US5155573A | Ferroelectric capacitor and a semiconductor device having the same | Electricity | 65 | Expired |
| US5760432A | Thin film strained layer ferroelectric capacitors | Electricity | 64 | Expired |
| US5400275A | Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected | Physics | 62 | Expired |
| US7135940B2 | Tunable filter and portable telephone | Electricity | 49 | Expired |
| US5517445A | Non-volatile semiconductor memory device capable of electrically performing read and write operation and method of reading information from the same | Physics | 45 | Expired |
| US5796648A | Nonvolatile semiconductor memory device and method for manufacturing same | Electricity | 44 | Expired |
| US5691219A | Method of manufacturing a semiconductor memory device | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5670808A | Metal oxide capacitor with a WN.sub.X electrode | Electricity | 40 | Expired |
| US5889299A | Thin film capacitor | Electricity | 36 | Expired |
| US5889696A | Thin-film capacitor device and RAM device using ferroelectric film | Physics | 34 | Expired |
| US6060735A | Thin film dielectric device | Electricity | 33 | Expired |
| US7463117B2 | Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR | Electricity | 30 | Expired |
| US7420320B2 | Piezoelectric thin film device and method for manufacturing the same | Emerging Cross-Sectional Technologies | 28 | Active |
| US5909389A | Semiconductor memory device using ferroelectric capacitor | Electricity | 27 | Expired |
| US5929473A | MMIC semiconductor device with WN.sub.x capacitor electrode | Electricity | 25 | Expired |
| US7490390B2 | Method of manufacturing a voltage controlled oscillator | Emerging Cross-Sectional Technologies | 22 | Active |
| US7323805B2 | Piezoelectric thin film device and method for manufacturing the same | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7211933B2 | Voltage controlled oscillator | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6809604B2 | Voltage control oscillator having a ferroelectric thin film perovskite single crystal resonator | Electricity | 14 | Expired |
| US6747529B2 | Piezoelectric thin film resonator and frequency variable resonator using the resonator | Electricity | 14 | Expired |
| US6767826B2 | Method of manufacturing semiconductor device | Electricity | 13 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.