Multi-point pyrometry with real-time surface emissivity compensation
US5156461A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1991 |
| Grant date | Oct 20, 1992 |
| Priority date | — |
| Expiry date | May 17, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/0074
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beams of light (224) that the semiconductor wafer (22) reflects. As a result, the sensor (200) generates accurate, high-resolution multi-point measurements of semiconductor wafer (22) temperature during a device fabrication process. The pyrometer (200) includes an infrared laser source (202) that directs coherent light beam (203) into beam splitter (204). From the beam splitter (204), the coherent light beam (203) is split into numerous incident coherent beams (210). Beams (210) travel via optical fiber bundles (218) to the surface of semiconductor wafer (22) within the fabrication reactor (80). Each optical fiber bundle (218) collects reflected coherent light beam and radiant energy from wafer (22). Reflected coherent light beam (226) and radiant energy (222) is directed to a detector (240) for detecting signals and recording radiance, emissivity, and temperature values. Multiple optical fi…
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