Method for forming a film on a substrate by activating a reactive gas
US5156881A · kind A · utility
319Cited by
7References
51Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1991 |
| Grant date | Oct 20, 1992 |
| Priority date | — |
| Expiry date | Apr 16, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film forming method includes the steps of supporting a semiconductor substrate having a trench or unevenness thereon in a reaction vessel, introducing a reactive gas into the reaction vessel, activating the reactive gas to form a deposit species, exhausting the interior of the reaction vessel, and cooling the semiconductor substrate below the liquid faction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.