Patent · US Expired

Complementary, isolated DMOS IC technology

US5156989A · kind A · utility

319Cited by
6References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 8, 1988
Grant dateOct 20, 1992
Priority date
Expiry dateNov 8, 2008

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S148/085
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process sequence that produces a plurality of pretransistor structures from which a variety of high voltage, isolated integrated circuits and low voltage integrated circuits are easily fabricated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.