Method for forming a mask pattern for contact hole
US5157002A · kind A · utility
5Cited by
3References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 28, 1990 |
| Grant date | Oct 20, 1992 |
| Priority date | — |
| Expiry date | Nov 28, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/102
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a mask pattern for contact hole in a highly integrated semiconductor device is disclosed. The method according to the invention utilizes a SOG film in order to form an accurate and compact mask pattern for the formation of a contact hole within the highly limited area at a predetermined semiconductor layer where a sizable step difference exists. The method according to the invention is also applicable for manufacturing a multi-layered highly integrated semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.