Seung Chan Moon
23Patents
6h-index
32Co-inventors
65Inventor score
Filing activity: Nov 28, 1990 → Apr 8, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7238653B2 | Cleaning solution for photoresist and method for forming pattern using the same | Chemistry; Metallurgy | 448 | Expired |
| US6916594B2 | Overcoating composition for photoresist and method for forming photoresist pattern using the same | Physics | 102 | Expired |
| US5583069A | Method for making a fine annular charge storage electrode in a semiconductor device using a phase-shift mask | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5741625A | Process for forming fine patterns in a semiconductor device utilizing multiple photosensitive film patterns and organic metal-coupled material | Electricity | 20 | Expired |
| US5716758A | Process for forming fine pattern for semiconductor device utilizing multiple interlaced exposure masks | Electricity | 15 | Expired |
| US5635335A | Method for fabricating semiconductor device utilizing dual photoresist films imaged with same exposure mask | Electricity | 9 | Expired |
| US7442648B2 | Method for fabricating semiconductor device using tungsten as sacrificial hard mask | Electricity | 6 | Expired |
| US5650250A | Light exposure mask for semiconductor devices | Physics | 5 | Expired |
| US5157002A | Method for forming a mask pattern for contact hole | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7303858B2 | Photoacid generating polymer, its preparation method, top anti-reflective coating composition comprising the same, method of forming a pattern in a semiconductor device, and semiconductor device | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5705319A | Process for forming fine patterns for a semiconductor device utilizing three photosensitive layers | Electricity | 3 | Expired |
| US7381519B2 | Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same | Physics | 2 | Active |
| US7022458B2 | Photoresist polymer and photoresist composition containing the same | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7288364B2 | Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same | Electricity | 2 | Expired |
| US7534548B2 | Polymer for immersion lithography and photoresist composition | Emerging Cross-Sectional Technologies | 1 | Active |
| US7494935B2 | Method for forming fine pattern of semiconductor device | Physics | 1 | Active |
| US7615338B2 | Photoresist coating composition and method for forming fine pattern using the same | Physics | 1 | Active |
| US7494599B2 | Method for fabricating fine pattern in semiconductor device | Emerging Cross-Sectional Technologies | 1 | Active |
| US7462439B2 | Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7838201B2 | Method for manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 0 | Active |
| US7419760B2 | Top anti-reflective coating composition, method for forming the pattern of a semiconductor device using the same, and semiconductor device comprising the pattern | Emerging Cross-Sectional Technologies | 0 | Active |
| US7198887B2 | Organic anti-reflective coating polymer, its preparation method and organic anti-reflective coating composition comprising the same | Physics | 0 | Expired |
| US7205089B2 | Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same | Chemistry; Metallurgy | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.