Exposure apparatus for controlling intensity of exposure radiation
US5157700A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1989 |
| Grant date | Oct 20, 1992 |
| Priority date | — |
| Expiry date | Aug 31, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/702
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.