Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane
US5158854A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1990 |
| Grant date | Oct 27, 1992 |
| Priority date | — |
| Expiry date | Aug 29, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Present invention provides a photosensitive and high energy beam sensitive resin composition which may be used as a resist material for forming both of the positive and negative patterns. The resin composition comprises: a substituted polysiloxane having the main polysiloxane chain and a substituent hydrophilic group or groups; and a solvent for the substituted polysiloxane. The substituted polysiloxane used in preferred embodiments of the invention are produced by acylating polysiloxanes including polydiphenylsiloxane and polyphenylsilsesquioxane to introduce acyl groups, followed by oxidation of the thus introduced acyl groups to convert them into carboxyl groups or by reducing the thus introduced acyl groups to convert them into alpha-hydroxyalkyl groups. The acyl, carboxyl or alpha-hydroxyalkyl groups are further substituted to obtain substituted polysiloxanes which are soluble in an aqueous alkali. The photosensitive resin composition of the invention has high sensitivity to a high energy beam, such as electron beam, X-ray and deep ultraviolet ray, and is excellent in resistance to oxygen plasma or other plasmas used in reactive ion etching. The resin composition of the invent…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.