Method for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regions
US5158896A · kind A · utility
6Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 1992 |
| Grant date | Oct 27, 1992 |
| Priority date | — |
| Expiry date | Jan 9, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A lateral injection group III-V heterostructure device having self-aligned graded contact diffusion regions of opposite conductivity types and a method of fabricating such devices are disclosed. The device includes a heterojunction formed by a higher bandgap III-V compound semiconductor formed over a lower bandgap III-V compound semiconductor. The method of the present invention allows the opposite conductivity type diffusion regions to diffuse simultaneously and penetrate the heterojunction. This results in compositional mixing of the compound semiconductor materials forming the heterojunction in the diffusion regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.