Method for measuring the electrical and optical performance of on-wafer microwave devices
US5159262A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1991 |
| Grant date | Oct 27, 1992 |
| Priority date | — |
| Expiry date | Jul 9, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/275
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for on-wafer testing of microwave devices, such as photodiodes, including a biasing method applicable when the device has a lower end connected to the ground plane of the wafer. Elements having a diode-like characteristic, such as photodiodes, are arranged side-by-side with the device, each preferably being of like geometry with the device, and each having an end connected to the ground plane. A first voltage is applied between the ground conductors of the probe and the ground plane of the wafer to place each element in forward-biased condition thereby creating a return path for the lower end of the device to the ground conductors located on the upper side of the wafer. The method further includes a calibration method for accurate measurements of photodetectors particularly when they are biased as described above, including measuring a performance parameter, such as responsivity, that characterizes the optical performance of the photodetector, measuring a network parameter, such as a reflection coefficient, that characterizes the electrical performance of the photodetector, and determining an adjusted value for the performance parameter based on the network parameter in wh…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.