Method for in-situ determination of the fermi level in GaAs and similar materials by photoreflectance
US5159410A · kind A · utility
Inventors
Key dates
| Filing date | Aug 3, 1990 |
| Grant date | Oct 27, 1992 |
| Priority date | — |
| Expiry date | Aug 3, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/0695
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for in-situ determination by photoreflectance of the Fermi level (V.sub.F) at the surfaces or interfaces of GaAs and related materials, in which a probe beam of monochromatic light and a modulated pump beam from a pump source are directed onto a sample, and the measured barrier height V.sub.m =V.sub.F -V.sub.S is obtained from the information in the reflected light, where V.sub.S represents the surface voltage effects on the sample by the photoreflectance, whereby V.sub.m approaches V.sub.F as V.sub.S approaches zero during repeated tests in which a parameter such as temperature affecting the numerical value of V.sub.S is changed until there is flattening of the curve illlustrating V.sub.m as a function of the parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.