Scanning electron microscope based parametric testing method and apparatus
US5159752A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1990 |
| Grant date | Nov 3, 1992 |
| Priority date | — |
| Expiry date | Nov 30, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A scanning electron microscope (28) is connected to a test structure (48) formed on a semiconductor wafer. The test structure (48) comprises a plurality of first parallel structures (54) and a plurality of second parallel structure (56) transverse to and interlocking with the first structures (54). An island (60) is formed within a grid (58) formed by the structures (54-56) and is separated therefrom. An electron beam (38) from the scanning electron microscope (28) is aimed at the structure (48) and secondary electrons emitted therefrom are visually displayed on a monitor (44). The visual display (47) provides information on whether the island (60) is electrically separated from the mesh (58) or shorted thereto by comparing the intensity of the various islands (60).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.