Hot filament chemical vapor deposition reactor
US5160544A · kind A · utility
68Cited by
0References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1990 |
| Grant date | Nov 3, 1992 |
| Priority date | — |
| Expiry date | Sep 6, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/458
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved hot filament chemical vapor deposition (HFCVD) reactor is disclosed comprising a gas dispersion system, a filament network and an apertured support plate for the substrate. The apertures in the support plate provide for counteracting the natural pressure and temperature gradients which arise within the reactor so that a uniform deposit or material can be coated over the entire surface of multiple small pieces simultaneously. Specifically, the apertured support plate substantially reduces the extent of radial (stagnation point) gas flow adjacent to the substrate which significantly improves coating uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.