Process for fabricating silicon carbide films with a predetermined stress

US5162133A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Johann W. Bartha · Aidlingen, DE
• Thomas Bayer · Igersheim, DE
• Johann Greschner · Neckartenzlingen, DE
• Georg Kraus · Konz, DE
• Olaf Wolter · Aidlingen, DE

Key dates

• Filing date: Dec 20, 1990
• Grant date: Nov 10, 1992
• Expiry date: Dec 20, 2010

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/325
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps: PA1 a) introducing a gas mixture of silane (SiH.sub.4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber; PA1 b) reacting the silane and ethylene at a temperature >400.degree. C., and in a total pressure range of about 26.6 to 266 Pa, at an RF power <100 W at 13.56, MHz, the reaction between said silane and ethylene being initiated and enhanced by glow discharge. In a preferred embodiment, the intrinsic film stress is tensile, and the silane and ethylene are reacted at a temperature of about 500.degree. C., in a total pressure range exceeding 106.4, Pa, and at an RF power of 75 W at 13.56 MHz. The tensile stress films may be coated with a metal absorber layer, a desired mask pattern is generated in the absorber layer, and the substrate is removed from the backside of wet etching. The resulting X-ray mask has a smooth surface, excellent dimensional stability and transparency for X-ray radiation.