Ion source
US5162699A · kind A · utility
16Cited by
13References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1991 |
| Grant date | Nov 10, 1992 |
| Priority date | — |
| Expiry date | Oct 11, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source of high ion yield, especially boron yield, is provided with a boron compound of high melting point and low work function such as LaB.sub.6 (lanthanum hexaboride) at a suitable location inside the arc chamber of the ion source, which operates on the principle of ion production by using a hot cathode to produce hot electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.